Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor
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چکیده
منابع مشابه
Simulation of electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor
The electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor (DHBT) are investigated. The study is based on energy balance (EB) transport model and TCAD SILVACO device simulator. InP/In0.24Ga0.76As0.73Sb0.27 DHBT have a low Emitter-Base conduction band discontinuity EC and a minimum base bandgap energy EG among the entire composition ran...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2001
ISSN: 0741-3106,1558-0563
DOI: 10.1109/55.910612